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SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit. For small current rectification. FEATURES
Low Forward Voltage : VF max=0.55V. IO=200mA recification possible.
KDR721S
SCHOTTKY BARRIER TYPE DIODE (CATHODE COMMAND)
L
E B
L
DIM A
2
MILLIMETERS _ 2.93 + 0.20
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
3
D
B C D E G H J K
A
G H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature
)
P P
L M N P
SYMBOL VRRM VR IO IFSM Tj Tstg
RATING 30 30 0.2 1 125 -55 125
UNIT V V A A
C N
M
K
J
3
1. ANODE 1 2. ANODE 2 3. CATHODE
2 1
SOT-23
Marking
Lot No. Type Name
MF
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VR VF IR CT trr
)
TEST CONDITION IR=1mA IF=0.2A VR=30V VR=10V, f=1MHz IR=IF=10mA MIN. 30 TYP. 13 3 MAX. 0.55 50 UNIT V V A pF nS
SYMBOL
2003. 2. 25
Revision No : 1
1/2
KDR721S
IR 10 REVERSE CURRENT I R (A)
2
VR
10 FORWARD CURRENT I F (mA) 10 10 1 10 10
-1 3
I F - VF
Ta=25 C
Ta=25 C
2
10
1
10
-1
-2
0
5
10
15
20
25
30
0
0.1
0.2
0.3
0.4
0.5
REVERSE VOLTAGE VR (V)
FORWARD VOLTAGE V F (V)
I R - Ta
10 REVERSE CURRENT I R (A)
5
VF - Ta
0.6 FORWARD VOLTAGE VF (V)
I F =200mA
V R =30V
10 4 10 3 10 10 1 -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C)
2
0.5
0.4
0.3
0.2 -40
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta ( C)
C T - VR
TERMINAL CAPACITANCE C T (pF) 60 50 40 30 20 10 0
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
2003. 2. 25
Revision No : 1
2/2

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